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| ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.21 ID = -1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23 package SOT23 APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMP3A13FTA ZXMP3A13FTC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING * 313 Top View PROVISIONAL ISSUE C - JULY 2004 1 ZXMP3A13F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -1.6 -1.3 -1.4 -6 -1.2 -6 625 5 806 6.4 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A mW mW/C mW mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 200 155 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE C - JULY 2004 2 ZXMP3A13F CHARACTERISTICS Max Power Dissipation (W) 10 0.7 RDS(on) Limited -ID Drain Current (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 1 DC 1s 100ms 10ms 1ms 100s 100m 10m Single Pulse Tamb=25C 100m 1 10 -VDS Drain-Source Voltage (V) Temperature (C) Safe Operating Area Derating Curve Single Pulse Tamb=25C Thermal Resistance (C/W) 200 150 MaximumPower (W) 1k Tamb=25C 10 D=0.5 100 Single Pulse 50 D=0.2 D=0.05 D=0.1 1 100 1m 10m 100m 1 10 100 1k 0 100 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE C - JULY 2004 3 ZXMP3A13F ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -1.0 0.210 0.330 2.48 S -30 -0.5 100 V A nA V I D =-250 A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr -0.85 18.6 14.8 t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.5 2.8 11.3 7.5 2.58 5.15 0.65 0.92 C iss C oss C rss 204 39.8 25.8 g fs V GS =-10V, I D =-1.4A V GS =-4.5V, I D =-1.1A V DS =-15V,I D =-1.4A pF pF pF V DS =-15V, V GS =0V, f=1MHz ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-1.4A V DS =-15V,V GS =-5V, I D =-1.4A V DD =-15V, I D =-1A R G =6.0 , V GS =-10V -0.95 V ns nC T J =25C, I S =-1.1A, V GS =0V T J =25C, I F =-0.95A, di/dt= 100A/s NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE C - JULY 2004 4 ZXMP3A13F TYPICAL CHARACTERISTICS 10 T = 25C 10V -ID Drain Current (A) -ID Drain Current (A) 5V 1 4V 3.5V 3V 2.5V -VGS 2V 10 T = 150C 10V 5V 4V 3.5V 3V 2.5V 2V 1 0.1 0.1 -VGS 1.5V 0.01 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 Output Characteristics Normalised RDS(on) and VGS(th) -ID Drain Current (A) 1.4 1.2 1.0 VGS = -10V ID = -1.4A RDS(on) T = 150C 1 T = 25C VGS(th) 0.1 1 2 3 0.8 0.6 -50 0 -VDS = 10V VGS = VDS ID = -250uA 4 5 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () 100 2V -VGS 2.5V 3V 3.5V 4V T = 25C Normalised Curves v Temperature 10 T = 150C -ISD Reverse Drain Current (A) 10 1 T = 25C 1 5V 10V 0.1 0.1 0.1 1 10 0.01 0.2 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Diode Forward Voltage PROVISIONAL ISSUE C - JULY 2004 5 ZXMP3A13F TYPICAL CHARACTERISTICS 300 10 C Capacitance (pF) 250 200 150 100 50 0 0.1 1 CISS COSS -VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz ID = -1.4A 8 6 4 2 VDS = -15V CRSS 10 0 0 2 4 6 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge PROVISIONAL ISSUE C - JULY 2004 6 ZXMP3A13F PACKAGE OUTLINE PAD LAYOUT PACKAGE DIMENSIONS Millimeters DIM A B C D F G 0.37 0.085 Min 2.67 1.20 Max 3.05 1.40 1.10 0.53 0.15 0.015 0.0034 Inches Min 0.105 0.047 Max 0.120 0.055 0.043 0.021 0.0059 DIM H K L M N Millimeters Min 0.33 0.01 2.10 0.45 Max 0.51 0.10 2.50 0.64 Inches Max 0.013 0.0004 0.083 0.018 Max 0.020 0.004 0.0985 0.025 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE C - JULY 2004 7 |
Price & Availability of ZXMP3A13F
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